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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4395-4400

Realization of giant optical rotatory power for red and infrared light using III2VI3 compound semiconductor (GaxIn1-x)2Se3

(4) Ye, Jiping a Yoshida, Tadashi a Nakamura, Yoshio a Nittono, Osamu a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Anomalous optical rotatory dispersion; Crystal structure; Defect wurtzite structure; III2VI3 compound semiconductor; Optical active absorption edge; Optical activity; Optical fundamental absorption edge

Indexed keywords

ANOMALOUS OPTICAL ROTATORY DISPERSION; COMPOUND SEMICONDUCTOR; DEFECT WURTZITE STRUCTURE; OPTICAL ACTIVE ABSORPTION EDGE; OPTICAL ACTIVITY;

ABSORPTION; BIREFRINGENCE; CRYSTAL STRUCTURE; EXPERIMENTS; INFRARED RADIATION; SEMICONDUCTOR MATERIALS;

OPTICAL ROTATION;

EID: 0030205596 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.4395 Document Type: Article

Times cited : (25)

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