Phosphorus concentration limitation in Czochralski silicon crystals

Journal of the Electrochemical Society

Volumn 147, Issue 1, 2000, Pages 345-349

  Chiou, Herng Der ^a,b  

^a PowerOn Technologies Incorporated   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN BOUNDARIES; MELTING; PHOSPHORUS; SEMICONDUCTOR DOPING;

CZOCHRALSKI SILICON CRYSTALS; HOT-ZONE CONFIGURATIONS;

SEMICONDUCTING SILICON;

EID: 0033900487     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393198     Document Type: Article

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