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Volumn 7271, Issue , 2009, Pages
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EUV patterning characterization using a 3D mask simulation and field EUV scanner
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Author keywords
EUV lithography; Shadowing effect
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Indexed keywords
3D-MASK SIMULATION;
ABSORBER LAYERS;
CD VARIATION;
CORRECTION METHOD;
DUV SCANNERS;
EUV LITHOGRAPHY;
EUV SOURCE;
EXPOSURE SYSTEM;
LINE-AND-SPACE PATTERNS;
OBLIQUE INCIDENCE;
OFF-AXIS;
PATTERN ORIENTATION;
PROCESS WINDOW;
REFLECTIVE OPTICS;
REFRACTIVE SYSTEMS;
SHADOWING EFFECT;
SHADOWING EFFECTS;
SHIFT-AND;
TECHNOLOGY NODES;
LIGHT SOURCES;
MASKS;
SCANNING;
TECHNOLOGY;
THREE DIMENSIONAL;
ULTRAVIOLET DEVICES;
EXTREME ULTRAVIOLET LITHOGRAPHY;
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EID: 67149091232
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.814407 Document Type: Conference Paper |
Times cited : (4)
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References (6)
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