Sub-30 nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Kojima, A ^a,b   Ohyi, H ^a   Koshida, N ^b  

^a Crestec Corp   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Ballistic electron; Cascade tunneling; Electron projection; Parallel EB lithography; Silicon nanowire

Indexed keywords

BALLISTIC ELECTRON; BALLISTIC ELECTRONS; CASCADE TUNNELING; CHROMATIC ABERRATION; DEVICE FABRICATIONS; EB LITHOGRAPHY; ELECTRON IMAGES; HIGH RESOLUTION; LOW ACCELERATING VOLTAGE; NM RESOLUTION; PARALLEL EB LITHOGRAPHY; QUANTUM CONFINEMENT EFFECTS; QUASI-BALLISTIC ELECTRONS; SI NANOWIRE; SILICON NANOWIRE; SILICON NANOWIRE ARRAYS; SMALL ENERGY; SURFACE ELECTRON;

BALLISTICS; ELECTROMAGNETIC FIELDS; ELECTRON BEAM LITHOGRAPHY; ELECTRON OPTICS; ELECTRON SOURCES; NANOWIRES; OPTICAL PROJECTORS; POSITION CONTROL; SILICON WAFERS; TUNNELING (EXCAVATION);

ELECTRONS;

EID: 67149089664     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.812933     Document Type: Conference Paper

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