Transition from smoothing to roughening of ion-eroded GaSb surfaces

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Keller, A ^a   Biermanns, A ^b   Carbone, G ^c   Grenzer, J ^a   Facsko, S ^a   Plantevin, O ^d   Gago, R ^e   Metzger, T H ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF SIEGEN   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^e INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BRADLEY-HARPER MODELS; CORRELATION LENGTHS; DIFFUSION PROCESS; DOT PATTERN FORMATION; GRAZING INCIDENCE SMALL ANGLE SCATTERINGS; IN-SITU; ION FLUENCE; ION SPUTTERING; NANO-DOT ARRAYS; PATTERN FORMATION; SELF-ORGANIZED; SPATIAL PERIODICITY; SURFACE SMOOTHING; SURFACE-ROUGHENING; TRANSIENT BEHAVIOR; X RAY REFLECTIVITY;

GALLIUM ALLOYS; IONS; SPUTTERING;

SURFACE DIFFUSION;

EID: 67049100726     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3136765     Document Type: Article

References (19)

1. G. Palasantzas, J. T. M. De Hosson, and J. Barnas, Surf. Sci. SUSCAS 0039-6028 507, 541 (2002). 10.1016/S0039-6028(02)01306-7
2. M. O. Liedke, B. Liedke, A. Keller, B. Hillebrands, A. Mücklich, S. Facsko, and J. Fassbender, Phys. Rev. B PRBMDO 0163-1829 75, 220407 (2007). 10.1103/PhysRevB.75.220407
3. T. W. H. Oates, A. Keller, S. Facsko, and A. Mucklich, Plasmonics ZZZZZZ 1557-1955 2, 47 (2007). 10.1007/s11468-007-9025-z
4. F. Frost, R. Fechner, D. Flamm, B. Ziberi, W. Frank, and A. Schindler, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 78, 651 (2004). 10.1007/s00339-003-2274-6
5. W. L. Chan and E. Chason, J. Appl. Phys. JAPIAU 0021-8979 101, 121301 (2007). 10.1063/1.2749198
6. V. Mussi, F. Granone, C. Boragno, F. B. de Mongeot, U. Valbusa, T. Marolo, and R. M. Montereali, Appl. Phys. Lett. APPLAB 0003-6951 88, 103116 (2006). 10.1063/1.2177660
7. D. Carbone, A. Alija, O. Plantevin, R. Gago, S. Facsko, and T. H. Metzger, Nanotechnology NNOTER 0957-4484 19, 035304 (2008). 10.1088/0957-4484/ 19/03/035304
8. O. Plantevin, R. Gago, L. Vazquez, A. Biermanns, and T. H. Metzger, Appl. Phys. Lett. APPLAB 0003-6951 91, 113105 (2007). 10.1063/1.2783964
9. T. Bobek, S. Facsko, H. Kurz, T. Dekorsy, M. Xu, and C. Teichert, Phys. Rev. B PRBMDO 0163-1829 68, 085324 (2003). 10.1103/PhysRevB.68.085324
10. D. Carbone, O. Plantevin, R. Gago, C. Mocuta, O. Bikondoa, A. Alija, L. Petit, H. Djazuli, and T. H. Metzger, J. Synchrotron Radiat. JSYRES 0909-0495 15, 414 (2008). 10.1107/S0909049508003944
11. H. Gnaser, Low-Energy Ion Irradiation of Solid Surfaces, Springer Tracts in Modern Physics (Springer, New York, 1999), Vol. 146.
12. M. Schmidbauer, X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures, Springer Tracts in Modern Physics (Springer, New York, 2004).
13. S. K. Sinha, E. B. Sirota, S. Garoff, and H. B. Stanley, Phys. Rev. B PRBMDO 0163-1829 38, 2297 (1988). 10.1103/PhysRevB.38.2297
14. R. Lazzari, J. Appl. Crystallogr. JACGAR 0021-8898 35, 406 (2002). 10.1107/S0021889802006088
15. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A JVTAD6 0734-2101 6, 2390 (1988). 10.1116/1.575561
16. R. Cuerno and A. L. Barabasi, Phys. Rev. Lett. PRLTAO 0031-9007 74, 4746 (1995). 10.1103/PhysRevLett.74.4746
17. B. Kahng, H. Jeong, and A. L. Barabasi, Appl. Phys. Lett. APPLAB 0003-6951 78, 805 (2001). 10.1063/1.1343468
18. S. Facsko, T. Bobek, A. Stahl, H. Kurz, and T. Dekorsy, Phys. Rev. B PRBMDO 0163-1829 69, 153412 (2004). 10.1103/PhysRevB.69.153412
19. The initial root mean square (rms) roughness of commercially available GaSb(100) has a value of ∼0.8 nm and is thus much higher than that of, e.g., commercial Si(100) with ∼0.2 nm.