Rank modulation for flash memories

IEEE Transactions on Information Theory

Volumn 55, Issue 6, 2009, Pages 2659-2673

  Jiang, Anxiao ^a   Mateescu, Robert ^b   Schwartz, Mosche ^c   Bruck, Jehoshua ^b  

^a Texas A and M University   (United States)

^b California Institute of Technology   (United States)

^c BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Asymmetric channel; Flash memory; Gray codes; Permutations; Rank modulation

Indexed keywords

APPROXIMATION SCHEME; ASYMMETRIC CHANNEL; AVERAGE-CASE; CELL STATE; DATA REPRESENTATIONS; DISCRETE CELLS; GRAY CODES; INDIVIDUAL CELLS; MULTILEVEL CELL; MULTILEVEL FLASH MEMORY; OPTIMAL SCHEME; PERMUTATIONS; RANDOM DATA; RANK MODULATION; SINGLE CELLS; STORAGE SOLUTIONS; WORST CASE;

CELL MEMBRANES; COMMUNICATION CHANNELS (INFORMATION THEORY); MODULATION;

FLASH MEMORY;

EID: 66949120714     PISSN: 00189448     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIT.2009.2018336     Document Type: Article

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