Stress and silicon nitride: A crack in the universal dissipation of glasses

Physical Review Letters

Volumn 102, Issue 22, 2009, Pages

  Southworth, D R ^a   Barton, R A ^a   Verbridge, S S ^a   Ilic, B ^a   Fefferman, A D ^a   Craighead, H G ^a   Parpia, J M ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISORDERED MATERIALS; DISORDERED STATE; MICRO RESONATORS; NITRIDE FILMS; ORDERS OF MAGNITUDE; Q-FACTOR; ROOM TEMPERATURE; SELF-SUPPORTING STRUCTURES; SINGLE CRYSTAL SILICON; TEMPERATURE DEPENDENT; UNIVERSAL BEHAVIORS; X-RAY STUDIES;

SILICON NITRIDE; SINGLE CRYSTALS;

SILICON WAFERS;

EID: 66749161998     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.225503     Document Type: Article

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