Ultrafast carrier dynamics in Si and on Si surfaces studied by femtosecond time-resolved two-photon photoemission spectroscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7214, Issue , 2009, Pages

  Tanimura, K ^a   Ichibayashi, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Femtosecond spectroscopy; Si surfaces; Surface recombination; Time resolved two photon photoemission spectroscopy; Ultrafast relaxation

Indexed keywords

FEMTOSECOND SPECTROSCOPY; SI SURFACES; SURFACE RECOMBINATION; TIME-RESOLVED TWO-PHOTON PHOTOEMISSION SPECTROSCOPY; ULTRAFAST RELAXATION;

COLOR PHOTOGRAPHY; CONDUCTION BANDS; DYNAMICS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; ELECTRONS; EMISSION SPECTROSCOPY; HOT ELECTRONS; LASER PULSES; LUMINESCENCE OF ORGANIC SOLIDS; MICROSTRUCTURE; MULTIPHOTON PROCESSES; NANOSTRUCTURES; PHOTOEMISSION; PHOTONS; SILICON; SURFACE RELAXATION; SURFACES; ULTRAFAST PHENOMENA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 66749085112     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813447     Document Type: Conference Paper

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