Mobility estimation in microsized bismuth wire arrays

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Hasegawa, Yasuhiro ^a   Murata, Masayuki ^a   Nakamura, Daiki ^a   Komine, Takashi ^b   Taguchi, Takashi ^c   Nakamura, Shinichiro ^c  

^a SAITAMA UNIVERSITY   (Japan)

^b IBARAKI UNIVERSITY   (Japan)

^c DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY SCATTERING; LOW TEMPERATURES; MICROWIRE; MICROWIRE ARRAY; MOBILITY ESTIMATION; NANOWIRE ARRAYS; POLY-CRYSTALLINE BULK; RESISTIVITY DEPENDENCE; SIMPLE MODEL; SMALL-DIAMETER; TEMPERATURE DEPENDENCE; WIRE ARRAYS; WIRE DIAMETER;

BISMUTH; ELECTRON MOBILITY; ION SENSITIVE FIELD EFFECT TRANSISTORS; LASERS; POSITIVE TEMPERATURE COEFFICIENT; SEEBECK COEFFICIENT; TEMPERATURE DISTRIBUTION; WIRE;

HOLE MOBILITY;

EID: 66549130091     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133136     Document Type: Article

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