Finite-size effects in the electrical transport properties of single bismuth nanowires

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Cornelius, T W ^a   Toimil Molares, M E ^a   Neumann, R ^a   Karim, S ^b  

^a GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON SCATTERING; GRAIN SIZE AND SHAPE;

CRYSTALLINITY; DEPOSITION PARAMETERS; RESISTANCE-VERSUS-TEMPERATURE CURVES;

NANOSTRUCTURED MATERIALS;

EID: 33845767046     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388857     Document Type: Article

References (21)

1. Y.-M. Lin, X. Sun, and M. S. Dresselhaus, Phys. Rev. B 62, 4610 (2000).
2. S. B. Cronin, Nanotechnology 13, 653 (2002).
3. N. Garcia, Y. H. Kao, and M. Strongin, Phys. Rev. B 5, 2029 (1972).
4. R. B. Dingle, Proc. R. Soc. London, Ser. A 201, 545 (1950).
5. A. F. Mayadas and M. Shatzkes, Phys. Rev. B 1, 1382 (1970).
6. L. Shubnikow and W. J. de Hass, Proc. Natl. Acad. Sci. U.S.A. 33, 350 (1930).
7. Yu. F. Komnik, E. I. Bukhshtab, Yu. V. Nikitin, and V. V. Andrievskii, Sov. Phys. JETP 33, 364 (1971).
8. J. Heremans, C. M. Thrush, Y.-M. Lin, S. Cronin, Z. Zhang, M. S. Dresselhaus, and J. F. Mansfield, Phys. Rev. B 61, 2921 (2000).
9. Z. Zhang, X. Sun, M. S. Dresselhaus, J. Y. Ying, and J. Heremans, Phys. Rev. B 61, 4850 (2000).
10. X. F. Wang, J. Zhang, H. Z. Shi, Y. W. Wang, G. W. Meng, X. S. Peng, L. D. Zhang, and J. Fang, J. Appl. Phys. 89, 3847 (2001).
11. K. Liu, C. L. Chien, P. C. Searson, and K. Yu-Shang, Appl. Phys. Lett. 73, 1436 (1998).
12. P. Chiu and I. Shih, Nanotechnology 15, 1489 (2004).
13. M. E. Toimil Molares, N. Chtanko, T. W. Cornelius, D. Dobrev, I. Enculescu, R. H. Blick, and R. Neumann, Nanotechnology 15, S201 (2004).
14. N. Chtanko, M. E. Toimil Molares, T. Cornelius, D. Dobrev, and R. Neumann, J. Phys. Chem. B 108, 9950 (2004).
15. T. W. Cornelius, J. Brötz, N. Chtanko, D. Dobrev, G. Miehe, R. Neumann, and M. E. Toimil Molares, Nanotechnology 16, S246 (2005).
16. Y. M. Lin, S. B. Cronin, J. Y. Ying, and M. S. Dresselhaus, Appl. Phys. Lett. 76, 3944 (2000).
17. Yu. F. Komnik and V. V. Andrievskii, Sov. J. Low Temp. Phys. 1, 51 (1975).
18. D. L. Partin, J. Heremans, D. T. Morelli, C. M. Thrush, C. H. Olk, and T. A. Perry, Phys. Rev. B 38, 3818 (1988).
19. R. G. Chambers, Proc. R. Soc. London, Ser. A 215, 481 (1952).
20. G. E. Smith, Phys. Rev. 115, 1561 (1959).
21. A. N. Friedman and S. H. Koenig, IBM J. Res. Dev. 4, 158 (1969).