Which photodiode to use: A comparison of CMOS-compatible structures

IEEE Sensors Journal

Volumn 9, Issue 7, 2009, Pages 752-760

  Murari, Kartikeya ^a   Etienne Cummings, Ralph ^b   Thakor, Nitish ^a   Cauwenberghs, Gert ^c  

^a JOHNS HOPKINS UNIVERSITY SCHOOL OF MEDICINE   (United States)

^b Johns Hopkins University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Active pixel sensors; CMOS; Photodiodes

Indexed keywords

ACTIVE PIXEL SENSOR; ACTIVE PIXEL SENSORS; CMOS; CMOS COMPATIBLE; FABRICATION PROCESS; FEEDBACK CAPACITOR; HIGH QUALITY; PHOTO-SENSORS; PHOTODIODE CAPACITANCE; PHOTODIODE STRUCTURES; PIXEL ARCHITECTURES; PIXEL STRUCTURE; QUALITY METRICS; SPECTRAL SENSITIVITY; STANDARD CMOS PROCESS;

CAPACITANCE; DIODES; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGE SENSORS; PHOTODIODES; PHOTOSENSITIVITY; SIGNAL TO NOISE RATIO; SPECTRUM ANALYSIS;

PIXELS;

EID: 66549092615     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2021805     Document Type: Article

References (28)

1. P. Noble, "Self-scanned silicon image detector arrays," IEEE Trans.Electron Devices, vol. 15, pp. 202-209, Apr. 1968.
2. G. Weckler, "Operation of p-n junction photodetectors in a photon flux integrating mode," IEEE J. Solid-State Circuits, vol. 2, pp. 65-73, Sep. 1967.
3. O. Yadid-Pecht, R. Ginosar, and Y. Shacham-Diamand, "A random access photodiode array for intelligent image capture," IEEE Trans. Electron Devices, vol. 38, no. 8, pp. 1772-1780, 1991.
4. N. Ricquier and B. Dierickx, "Pixel structure with logarithmic response for intelligent and flexible imager architectures," Microelectron. Eng., vol. 19, no. 1-4, pp. 631-634, 1992.
5. E. Fossum, "Active pixel sensors: Are CCDs dinosaurs?," in Proc. SPIE, 1993, vol. 1900, pp. 2-14.
6. S. Kleinfelder, S. Lim, X. Liu, and A. El Gamal, "A 10000 frames/s CMOS digital pixel sensor," IEEE J. Solid-State Circuits, vol. 36, pp. 2049-2059, Dec. 2001.
7. G. Agranov, J. Ladd, T. Gilton, R. Mauritzson, U. Boettiger, X. Fan, and X. Li, "Small pixel development for novel CMOS image sensors," in Proc. SPIE, 2008, vol. 7001, p. 700108, SPIE.
8. R. Philipp and R. Etienne-Cummings, "A 128 × 128 33 mW 30 frames/s single-chip stereo imager," in Proc. IEEE Int. Solid-State Circuits Conf. Digest of Tech. Papers; ISSCC 2006, 2006, vol. 6-9, pp. 2050-2059.
9. Y. Chi, U. Mallik, M. Clapp, E. Choi, G. Cauwenberghs, and R. Etienne-Cummings, "CMOS camera with in-pixel temporal change detection and ADC," IEEE J. Solid-State Circuits, vol. 42, pp. 2187-2196, Oct. 2007.
10. M. Bigas, E. Cabruja, J. Forest, and J. Salvi, "Review of CMOS image sensors," Microelectronics J., vol. 37, no. 5, pp. 433-451, 2006.
11. D. Litwiller, "CMOS vs. CCD: Maturing technologies, maturing markets," Photonics Spectra, vol. 39, no. 8, pp. 54-58, 2005.
12. P. Bhadri, P. Mal, S. Konanki, and F. Beyette, "Implementation of CMOS photodetectors in optoelectronic circuits," in Proc. Ann. Meeting IEEE Lasers and Electro-Optics Soc., Nov. 2002, vol. 2, pp. 683-684.
13. F. Odiot, J. Bonnouvrier, C. Augier, J. Raynor, R. Central, S. Microelectron, and F. Crolles, "Test structures for quantum efficiency characterization for silicon image sensors," in Proc. Int. Conf. Microelectron. Test Structures, 2003, pp. 29-33.
14. D.-Y. Li, V. Gaudet, and A. Basu, "Test results of various CMOS image sensor pixels," in Proc. Canadian Conf. Elect. Comput. Eng., May 2005, pp. 2017-2020.
15. B. Fowler, D. Yang, H. Min, and A. El Gamal, "Single pixel test structures for characterization and comparative analysis of CMOS image sensors," in Proc. IEEE Workshop on Charge Coupled Devices, 1997, pp. 11-1-11-4.
16. H. Tian et at., "Active pixel sensors fabricated in a standard 0.18 μm CMOS technology," in Proc. SPIE, 2001, vol. 4306, pp. 441-449.
17. J. Janesick et al., "CMOS minimal array," in Proc. SPIE, 2006, vol. 6295, p. 62950O.
18. O. Yadid-Pecht and R. Etienne-Cummings, CMOS Imagers: From Phototransduction to Image Processi. Norwell, MA: Kluwer Academic, 2004.
19. B. G. Streetman and S. Banerjee, Solid State Electronic Devices. Englewood Cliffs, NJ: Prentice-Hall, 1999.
20. S. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, 1981 878 p..
21. R. Baker, CMOS Circuit Design, Layout, and Simulation. New York: Wiley, 2004.
22. N. S. Saks, "A technique for suppressing dark current generated by interface states in buried channel CCD imagers," IEEE Electron Device Lett., vol. 1, no. 7, pp. 131-133, 1980.
23. B. C. Burkey, W. C. Chang, J. Littlehale, T. H. Lee, T. J. Tredwell, J. P. Lavine, and E. A. Trabka, "The pinned photodiode for an interline-transfer CCD image sensor," in Proc. 1984 Int. Electron Devices Meeting, 1984, vol. 30, pp. 28-31.
24. P. Lee, R. Gee, M. Guidash, T. Lee, and E. R. Fossum, "An active pixel sensor fabricated using CMOS/CCD process technology," in Proc. 1995 IEEE Workshop on CCDs and Advanced Image Sensors, Dana Point, CA, 1995, pp. 115-119.
25. L. Kozlowski, D. Standley, J. Luo, A. Tomasini, A. Gallagher, R. Mann, B. Hsieh, T. Liu, and W. Kleinhans, "Theoretical basis and experimental confirmation: Why a CMOS imager is superior to a CCD," in Proc. SPIE, 1999, vol. 3698, p. 388.
26. B. Fowler, J. Balicki, D. How, M. Godfrey, and P. Inc, "Low-FPN highgain capacitive transimpedance amplifier for low-noise CMOS image sensors," in Proc. SPIE, 2001, vol. 4306, p. 68, SPIE.
27. H. Tian, B. Fowler, and A. El Gamal, "Analysis of temporal noise in CMOS APS," in Proc. SPIE, 1999, vol. 3649, p. 177, SPIE.
28. B. Fowler, M. Godfrey, and S. Mims, "Reset noise reduction in capacitive sensors," IEEE Trans. Circuits and Syst. I, vol. 53, no. 8, p. 1658, 2006.