Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 239-240

  Pau, J L ^a   Monroy, E ^a   Munoz E ^a   Calle, F ^a   Sanchez Garcia M A ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTRUM ANALYSIS; TIME MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; METAL SEMICONDUCTOR METAL PHOTODETECTORS;

ULTRAVIOLET DETECTORS;

EID: 6644220718     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010146     Document Type: Article

References (8)

1. ZHAO, Z.M., JIANG, R.L., CHEN, P., XI, D.J., LUO, Z.Y., ZHANG, R., SHEN, B., CHEN, Z.Z., and ZHENG, Y.D.: 'Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111)', Appl. Phys. Lett., 2000, 77, pp. 444-446
2. PAU, J.L., MONROY, E., NARANJO, F.B., MUÑOZ, E., CALLE, F., SÁNCHEZ-GARCÍA, M.A., and CALLEJA, E.: 'High visible rejection AlGaN photodetectors on Si(111) substrates', Appl. Phys. Lett., 2000, 76, pp. 2785-2787
3. PAU, J.L., MONROY, E., MUÑOZ, E., NARANJO, F.B., CALLE, F., SÁNCHEZ-GARCÍA, M.A., and CALLEJA, E.: 'AlGaN photodetectors grown on Si(111) by molecular beam epitaxy', to be published in J. Cryst. Growth
4. MONROY, E., CALLE, F., MUÑOZ, E., OMNÉS, F., and GIBART, P.: 'Low noise AlGaN metal-semiconductor-metal photodiodes', Electron. Lett., 1999, 35, pp. 240-241
5. CARRANO, J.C., GRUDOWSKI, P.A., EITING, C.J., DUPUIS, R.D., and CAMPBELL, J.C.: 'Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers', Appl. Phys. Lett., 1997, 70, pp. 1992-1994
6. BINET, F., DUBOZ, J.Y., ROSENCHER, E., SCHOLZ, F., and HÄRLE, V.: 'Mechanisms of recombination in GaN photodetectors', Appl. Phys. Lett., 1996, 69, pp. 1202-1204
7. GARRIDO, J.A., MONROY, E., IZPURA, I., and MUÑOZ, E.: 'Photoconductive gain modelling of GaN photodetectors', Semicond. Sci. Technol., 1998, 13, pp. 563-568
8. MISRA, M., and MOUSTAKAS, T.D.: 'Photoconductivity recombination kinetics in GaN films'. Mat. Res. Soc. Symp. Proc., 2000, Vol. 622, pp. T5.4.1-T5.4.6