SCOPUS 정보 검색 플랫폼

Volumn 35, Issue 3, 1999, Pages 240-241

Low noise AlGaN metal-semiconductor-metal photodiodes

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; SEMICONDUCTING ALUMINUM COMPOUNDS;

METAL-SEMICONDUCTOR-METAL PHOTODIODES;

PHOTODIODES;

EID: 0033521843 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19990153 Document Type: Article

Times cited : (13)

References (8)

1
- 5944240962
- 1-xN (0 ≤ x ≤ 1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
- 1-xN (0 ≤ x ≤ 1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition', Appl. Phys. Lett., 1997, 70, pp. 949-951
- (1997) Appl. Phys. Lett. , vol.70 , pp. 949-951
- Walker, D.¹ Zhang, X.² Saxler, A.³ Kung, P.⁴ Xu, J.⁵ Razeghi, M.⁶

2
- 0000338354
- 1-xN:Si Schottky barrier photodiodes with fast response and high detectivity
- 1-xN:Si Schottky barrier photodiodes with fast response and high detectivity', Appl. Phys. Lett., 1998, 73, pp. 2146-2148
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2146-2148
- Monroy, E.¹ Calle, F.² Muñoz, E.³ Omnes, F.⁴ Gibart, P.⁵ Muñoz, J.A.⁶

3
- 0000517221
- GaN-based solar-UV detector instrument
- MONROY, E., CALLE, F., ANGULO, C., VILA, P., SANZ, A., GARRIDO, J.A., MUÑOZ, E., CALLEJA, E., OMNÈS, F., BEAUMONT, B., and GIBART, P.: 'GaN-based solar-UV detector instrument', Appl. Opt., 1998, 37, pp. 5058-5062
- (1998) Appl. Opt. , vol.37 , pp. 5058-5062
- Monroy, E.¹ Calle, F.² Angulo, C.³ Vila, P.⁴ Sanz, A.⁵ Garrido, J.A.⁶ Muñoz, E.⁷ Calleja, E.⁸ Omnès, F.⁹ Beaumont, B.¹⁰ Gibart, P.¹¹

4
- 0031556695
- High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single crystal GaN epitaxial layers
- CARRANO, J.C., LI, T., GRUDOWSKI, P.A., EITING, C.J., DUPUIS, R.D., and CAMPBELL, J.C: 'High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single crystal GaN epitaxial layers', Electron. Lett., 1997, 33, pp. 1980-1981
- (1997) Electron. Lett. , vol.33 , pp. 1980-1981
- Carrano, J.C.¹ Li, T.² Grudowski, P.A.³ Eiting, C.J.⁴ Dupuis, R.D.⁵ Campbell, J.C.⁶

5
- 0032569544
- Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
- CARRANO, J.C., LI, T., BROWN, D.L., GRUDOWSKI, P.A., EITING, C.J., DUPUIS, R.D., and CAMPBELL, J.C.: 'Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN', Appl. Phys. Lett., 1998, 73, pp. 2405-2407
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2405-2407
- Carrano, J.C.¹ Li, T.² Brown, D.L.³ Grudowski, P.A.⁴ Eiting, C.J.⁵ Dupuis, R.D.⁶ Campbell, J.C.⁷

6
- 0348010410
- Unpublished
- WALKER, D., MONROY, E., KUNG, P., FIMALTON, M., SÁNCHEZ, F.J., DIAZ, J., and RAZEGHI, M.: 'High speed, low noise metal-semiconductor-metal ultraviolet photodetectors based on GaN', (Unpublished)
- High Speed, low Noise Metal-semiconductor-metal Ultraviolet Photodetectors Based on GaN
- Walker, D.¹ Monroy, E.² Kung, P.³ Fimalton, M.⁴ Sánchez, F.J.⁵ Diaz, J.⁶ Razeghi, M.⁷

7
- 0001428156
- Schottky barrier photodetectors based on AlGaN
- OSINSKY, A., GANGOPADHYAY, S., LIM, B.W., ANWAR, M.Z., KHAN, M.A., KUKSENKOV, D.V., and TEMKIN, H.: 'Schottky barrier photodetectors based on AlGaN', Appl. Phys. Lett., 1998, 72, pp. 742-744
- (1998) Appl. Phys. Lett. , vol.72 , pp. 742-744
- Osinsky, A.¹ Gangopadhyay, S.² Lim, B.W.³ Anwar, M.Z.⁴ Khan, M.A.⁵ Kuksenkov, D.V.⁶ Temkin, H.⁷

8
- 0003546026
- Clarendon Press, Oxford
- RHODERICK E.H., and WILLIAMS RH.: 'Metal-semiconductor contacts' (Clarendon Press, Oxford, 1988), pp. 109-113
- (1988) Metal-semiconductor Contacts , pp. 109-113
- Rhoderick, E.H.¹ Williams, R.H.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.