Insertion reactions of an aminogermylene and formation of a single-source precursor for GeTe thin films

European Journal of Inorganic Chemistry

Volumn , Issue 14, 2009, Pages 2047-2049

  Chen, Tianniu ^a   Hunks, William ^a   Chen, Philip S ^a   Stauf, Gregory T ^a   Cameron, Thomas M ^a   Xu, Chongying ^a   DiPasquale, Antonio G ^b   Rheingold, Arnold L ^b  

^a ENTEGRIS INC   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Germanium; Main group elements; Metal organic chemical vapor deposition; Semiconductors; Tellurium; Thin films

Indexed keywords

GERMANIUM; GERMANIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SINGLE CRYSTALS; TELLURIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

CARBODIIMIDES; GERMANIUMS (GE); GERMYLENES; GUANIDINATES; INSERTION REACTIONS; MAIN-GROUP ELEMENTS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MULTINUCLEAR NMR; SINGLE-SOURCE PRECURSOR; THIN-FILMS;

THIN FILMS;

EID: 66149153051     PISSN: 14341948     EISSN: 10990682     Source Type: Journal    
DOI: 10.1002/ejic.200900177     Document Type: Article

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