CVD of amorphous GeTe thin films

Materials Research Society Symposium Proceedings

Volumn 1071, Issue , 2008, Pages 187-192

  Chen, Philip S ^a   Hunks, William J ^a   Stender, Matthias ^a   Chen, Tianniu ^a   Stauf, Gregory T ^a   Xu, Chongying ^a   Roeder, Jeffrey F ^a  

^a ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; SILICA; TELLURIUM; TELLURIUM COMPOUNDS; THIN FILMS; TITANIUM NITRIDE;

COREACTANTS; CRYSTALLINE FILMS; GERMANIUMS (GE); PHASE CHANGE;

GERMANIUM COMPOUNDS;

EID: 55849127016     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1071-f09-10     Document Type: Conference Paper

References (2)

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2. M. Breitwisch, T. Nirschl, C.F. Chen, Y. Zhu, M.H. Lee, M. Lamorey, G.W. Burr, E. Joseph, A. Schrott, J.B. Philipp, R. Cheek, T.D. Happ, S.H. Chen, S. Zaidi, P. Flaitz, J. Bruley, R. Dasaka, B. Rajendran, S. Rossnagel, M. Yang, Y.C. Chen, R. Bergmann, H.L. Lung, and C. Lam, 2007 Symposium of VLSI Technology Digest of Technical Papers, 6B-3.