Low temperature deposition of Ge thin films with a Ge(II) silylamido source

ECS Transactions

Volumn 11, Issue 7, 2007, Pages 269-278

  Chen, Tianniu ^a   Xu, Chongying ^a   Hunks, William ^a   Stender, Matthias ^a   Stauf, Gregory T ^a   Chen, Philip S ^a   Roeder, Jeffrey F ^a  

^a Advanced Technology Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ASPECT RATIO; CHALCOGENIDES; CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; FILM GROWTH; GERMANIUM COMPOUNDS; INERT GASES; PHASE CHANGE MEMORY; TEMPERATURE; THIN FILMS;

BINARY FILMS; CHALCOGENIDE ALLOY; GE THIN FILMS; HIGH ASPECT RATIO TRENCHES; LOW-TEMPERATURE DEPOSITION; PHASE-CHANGE RANDOM ACCESS MEMORY; STEP COVERAGE; UNIFORM FILMS;

ATOMIC LAYER DEPOSITION;

EID: 45249117061     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779090     Document Type: Conference Paper

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