Effect of the annealing process on the microstructure of La2Zr2O7 thin layers epitaxially grown on LaAlO3 by metalorganic decomposition

Journal of Crystal Growth

Volumn 311, Issue 11, 2009, Pages 3204-3210

  Jimenez C ^a   Caroff, T ^a,b   Rapenne, L ^a   Morlens, S ^b   Santos, E ^a   Odier, P ^b   Weiss, F ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

A1. Nucleation and growth; A1. Transmission electron microscopy (TEM); A3. Film growth and epitaxy; A3. Methods of deposition of films and coatings; B1. Superconducting wires; fibers and tapes

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CLADDING (COATING); CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRYSTAL STRUCTURE; FILM GROWTH; HEATING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; SINGLE CRYSTALS; SOLVENTS; SUBSTRATES; SUPERCONDUCTING TAPES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZIRCONIUM COMPOUNDS;

ANNEALING PARAMETERS; ANNEALING TEMPERATURES; BUFFER LAYERS FOR COATED CONDUCTORS; FILM GROWTH AND EPITAXY; METAL ORGANIC DECOMPOSITION; METHODS OF DEPOSITION OF FILMS AND COATINGS; NUCLEATION AND GROWTH; SUBSTRATE PROTECTION;

LANTHANUM COMPOUNDS;

EID: 66149128814     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.021     Document Type: Article

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