Cesium redeposition artifacts during low energy ToF-SIMS depth profiling

Applied Surface Science

Volumn 255, Issue 17, 2009, Pages 7586-7589

  Vitchev, R G ^b   Brison, J ^c   Houssiau, L ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

^b FLEMISH INSTITUTE FOR TECHNOLOGICAL RESEARCH VITO   (Belgium)

^c University of Washington   (United States)

Author keywords

Cesium; Extractor bias; Silicon; ToF SIMS profiling

Indexed keywords

CESIUM; ELECTRIC FIELDS; SECONDARY ION MASS SPECTROMETRY; SILICON;

EXTRACTOR BIAS; ION EXTRACTION; LOW-ENERGY; REDEPOSITION; STEADY STATE; TOF SIMS;

DEPTH PROFILING;

EID: 66049158221     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.033     Document Type: Article

References (9)

1. Conard T., and Vandervorst W. In: Zschech E., Whelan C., and Mikolajick T. (Eds). Materials for Information Technology (2005), Springer, London Part V
2. Houssiau L., Vitchev R.G., Conard T., Vandervorst W., and Bender H. Appl. Surf. Sci. 231-232 (2004) 585
3. Mine N., Douhard B., Brison J., and Houssiau L. Rapid Commun. Mass Spectrom. 21 (2007) 2680
4. Vitchev R.G., Brison J., and Houssiau L. Appl. Surf. Sci. 255 (2008) 1331
5. Stephan T., Zehnpfenning J., and Benninghoven A. J. Vac. Sci. Technol. A 12 2 (1994) 405
6. Kehui W. Sci. Technol. Adv. Mater. 6 (2005) 789
7. Chakarov I.R., Todorov S.S., and Karpuzov D.S. Nucl. Instrum. Methods B 69 (1992) 193
8. Todorov S.S., Marton D., Boyd K.J., Al-Bayati A.H., and Rabalais J.W. J. Vac. Sci. Technol. A 12 (1994) 3192
9. Brison J., Vitchev R.G., and Houssiau L. Nucl. Instrum. Methods B 266 (2008) 5159