ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO 2 /Al 2 O 3 oxides

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 585-589

  Houssiau, L ^a   Vitchev, R G ^a   Conard, T ^b   Vandervorst, W ^b   Bender, H ^b  

^a UNIVERSITY OF NAMUR   (Belgium)

^b IMEC   (Belgium)

Author keywords

ALCVD; Depth profiling; High k dielectrics; Mixed oxides; ToF SIMS

Indexed keywords

ALUMINA; CONCENTRATION (PROCESS); DIELECTRIC PROPERTIES; IONS; SECONDARY ION MASS SPECTROMETRY; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); DEPTH PROFILING; HIGH K DIELECTRICS; MIXED OXIDES; TIME OF FLIGHT STATIC SECONDARY ION MASS SPECTROMETRY (TOF-SSIMS);

HAFNIUM COMPOUNDS;

EID: 2942588720     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.112     Document Type: Conference Paper

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