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Volumn 255, Issue 4, 2008, Pages 1331-1333
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Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling
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Author keywords
Cesium; Depth profiling; Dynamic TRIM; Silicon
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Indexed keywords
CESIUM;
ION IMPLANTATION;
SECONDARY ION MASS SPECTROMETRY;
SILICON;
SURFACE SEGREGATION;
DEPTH DISTRIBUTION;
DYNAMIC TRIM;
H-TERMINATED SI SURFACES;
INCIDENCE ANGLES;
PROFILOMETERS;
RELATIVE HEIGHTS;
SPUTTERING BEAMS;
STEADY STATE;
DEPTH PROFILING;
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EID: 56449119546
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.05.260 Document Type: Article |
Times cited : (4)
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References (15)
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