Influence of processing parameters on atmospheric pressure plasma etching of polyamide 6 films

Applied Surface Science

Volumn 255, Issue 17, 2009, Pages 7683-7688

  Gao, Zhiqiang ^a,b   Peng, Shujing ^a,b   Sun, Jie ^a,b   Yao, Lan ^a,b   Qiu, Yiping ^a,b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b DONGHUA UNIVERSITY   (China)

Author keywords

Atmospheric pressure plasma; Etching; Moisture regain; Polyamide; XPS

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; ETCHING; FIGHTER AIRCRAFT; OXYGEN; PLASMA APPLICATIONS; PLASMA ETCHING; POLYAMIDES; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC PRESSURE PLASMAS; BONDING STRENGTH; PLASMA TREATMENT; PROCESSING PARAMETERS; SUBSTRATE DISTANCE; T-PEEL STRENGTH; TREATMENT DURATION; TREATMENT TIME;

REGAIN;

EID: 66049151591     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.137     Document Type: Article

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