Study on the growth and interfacial strain of CoFe2O4/BaTiO3 bilayer films

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3300-3304

  Zhu, J ^a   Zhou, L X ^a   Huang, W ^a   Li, Y Q ^a   Li, Y R ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A3. Laser molecular beam epitaxy; A3. Thin film; B2. BaTiO3; B2.CoFe2O4

Indexed keywords

A3. LASER MOLECULAR BEAM EPITAXY; A3. THIN FILM; ATOMIC SMOOTH; B2. BATIO3; B2.COFE2O4; BI-LAYER FILMS; FERROELECTRIC PROPERTY; GROWTH BEHAVIOR; GROWTH MODES; GROWTH PROCESS; HIGH-RESOLUTION X-RAY DIFFRACTION; IN-SITU; INTERFACIAL STRAIN; ISLAND GROWTH MODE; LASER MOLECULAR BEAM EPITAXY; LAYER-BY-LAYER GROWTH; LONG DURATION; SRTIO; STRAIN EFFECT; TETRAGONALITY; VARYING THICKNESS;

BARIUM COMPOUNDS; CRYSTAL GROWTH; DIFFRACTION; FERROELECTRIC FILMS; LASERS; LATTICE MISMATCH; MAGNETIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TENSILE STRESS; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FILM GROWTH;

EID: 66049124221     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.003     Document Type: Article

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