Etch aware optical proximity correction: A first step toward integrated pattern engineering

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7274, Issue , 2009, Pages

  Dunn, D N ^a   Mansfield, S ^a   Stobert, I ^a   Sarma, C ^b   Lembach, G ^c   Liu, J ^d   Herold, K ^b  

^a IBM   (United States)

^b INFINEON TECHNOLOGIES   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d Hudson Valley Research Park   (United States)

Author keywords

Etch modeling; Etch aware OPC; Model based retargeting

Indexed keywords

CRITICAL DIMENSION; ETCH MODEL; ETCH MODELING; ETCH PATTERNS; ETCH PROCESS; ETCH-AWARE OPC; IN-PLANE; INTEGRATED PATTERN; MATERIALS SELECTION; MODEL BASED RETARGETING; MODEL-BASED; ON-WAFER; OPTICAL PROXIMITY CORRECTIONS; PATTERN TRANSFERS; PROCESS OPTIMIZATION; REACTIVE ION ETCH; RESOLUTION ENHANCEMENT TECHNOLOGY; SHALLOW TRENCH ISOLATION; UNIT PROCESS;

LITHOGRAPHY; OPTICAL RESOLVING POWER; POLYSILICON; SILICON WAFERS;

OPTIMIZATION;

EID: 65849220376     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814224     Document Type: Conference Paper

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