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Volumn 517, Issue 18, 2009, Pages 5563-5568

Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering

Author keywords

Indium zinc tin oxide; Organic light emitting diodes; Radio frequency magnetron sputtering; Resistivity; Scanning electron microscopy; Transmission electron microscopy; Transparent conducting oxide; X ray diffraction

Indexed keywords

AMBIENT ENVIRONMENT; AMORPHOUS STRUCTURES; ANNEALING PROPERTIES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRODE FILM; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FIGURE OF MERIT; FILM STRUCTURE; GROWTH CONDITIONS; HIGH TRANSPARENCY; LOW RESISTIVITY; LOW SUBSTRATE TEMPERATURE; POST ANNEALING; RADIO-FREQUENCY MAGNETRON SPUTTERING; RAPID THERMAL ANNEALING PROCESS; RESISTIVITY; RF-POWER; ROOM TEMPERATURE; SMOOTH SURFACE; TRANSPARENT CONDUCTING OXIDE; WORKING PRESSURES; ZINC TIN OXIDE;

EID: 65649134779     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.138     Document Type: Article
Times cited : (19)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.