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Volumn 517, Issue 17, 2009, Pages 5298-5300
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Influence of film thickness on the structural, electrical and photoluminescence properties of vacuum deposited Alq3 thin films on c-silicon substrate
a
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Author keywords
Capacitance voltage; Current voltage; Photoluminescence; Transition voltage
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Indexed keywords
CAPACITANCE-VOLTAGE;
CRYSTAL SILICON;
CURRENT-VOLTAGE;
DEPOSITED FILMS;
MOLECULAR ORGANIZATION;
PHOTOLUMINESCENCE PROPERTIES;
PL EMISSION ENERGIES;
PL SPECTROSCOPY;
SILICON SUBSTRATES;
TRANSITION VOLTAGE;
TRIS(8-HYDROXYQUINOLINE) ALUMINUM;
TURN ON VOLTAGE;
VACUUM EVAPORATION TECHNIQUE;
ALUMINA;
CAPACITANCE;
EMISSION SPECTROSCOPY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
MAGNETIC FILMS;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING SILICON COMPOUNDS;
VACUUM;
VACUUM EVAPORATION;
FILM THICKNESS;
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EID: 65649129732
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.03.145 Document Type: Article |
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Times cited : (16)
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References (12)
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