High quality laser cleaving process for Mono- and polycrystalline silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7202, Issue , 2009, Pages

  Haupt, Oliver ^a   Schuetz, Viktor ^a   Schoonderbeek, Aart ^a   Richter, Lars ^a   Kling, Rainer ^a  

^a LASER ZENTRUM HANNOVER E V   (Germany)

Author keywords

Bending strength; Cleaving; Laser; Thermally induced stress; Zero kerf

Indexed keywords

CLEAVING; CLEAVING PROCESS; COMPLEX INTERACTION; CONVENTIONAL LASERS; CRACK FORMATION; CRYSTALLINE ORIENTATIONS; CRYSTALLINE SILICONS; CUTTING SPEED; CUTTING-DIRECTION; EDGE QUALITY; ELECTRONIC PACKAGING INDUSTRY; HIGH QUALITY; LASER CLEAVING; MATERIAL LOSS; MECHANICAL FORCE; MECHANICAL PROCESS; PARAMETER VARIATION; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE SUBSTRATES; PROCESS WINDOW; REPRODUCIBILITY; SPOT SIZES; SURFACE DEFORMATION; TEMPERATURE DEPENDENT; THERMALLY INDUCED STRESS; THIN WAFERS; ZERO KERF;

BENDING STRENGTH; CHIP SCALE PACKAGES; CRACKS; CRYSTAL CUTTING; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; PARAMETER ESTIMATION; POLYSILICON; SILICON WAFERS; SUBSTRATES;

LASERS;

EID: 65649115126     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.810053     Document Type: Conference Paper

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