Raman microprobe analysis of strained polysilicon deposited layers

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 742-745

  Talaat, H ^a   Negm, S ^a   Schaffer, H E ^b   Adar, F ^b   Nassiopoulos, A G ^c  

^a AIN SHAMS UNIVERSITY   (Egypt)

^b Instruments SA   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MICROANALYSIS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SILICON WAFERS; STRAIN; STRESS ANALYSIS; STRESS CONCENTRATION; THERMAL EFFECTS;

POLYSILICON; RAMAN MICROPROBE ANALYSIS; TENSILE STRESSES;

SEMICONDUCTING FILMS;

EID: 17144438866     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00550-3     Document Type: Article

References (7)

1. I. De Wolf, Semicond. Sci. Technol. 139 (1996) 11, and references therein.
2. G. Kaltsas, A.G. Nassiopoulos, in: Proc. MRS 1996 Fall Meeting, Boston, MA.
3. E. Anastassakis, A. Pinczuk, E. Burstein, F.H. Pollak, M. Cardona. Solid State Commun. 133 (1970) 8.
4. E. Anastassakis, E. Liarokapis, J. Appl. Phys. 3346 (1987) 62.
5. R. Hill, Proc. Phys. Soc. London Sect. 349 (1952) A65.
6. S.M. Hu, J. Appl. Phys. R53 (1991) 70.
7. I. De Wolf, Vanhellemont, A. Romano-Rodriguez, H. Norstrom, H.E. Maes, J. Appl. Phys. 898 (1992) 71.