The structure of Si-SiO2 layers with high excess Si content prepared by magnetron sputtering

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5468-5473

  Baran, N ^a   Bulakh, B ^a   Venger, Ye ^a   Korsunska, N ^a   Khomenkova, L ^a   Stara, T ^a   Goldstein, Y ^b   Savir, E ^b   Jedrzejewski, J ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

Electron paramagnetic resonance; Photoluminescence; Si nanoparticles; Silicon oxide; Sputtering

Indexed keywords

AMORPHOUS PHASE; AS-DEPOSITED FILMS; CRYSTALLINE FORM; DEPTH DISTRIBUTION; ELECTRON PARAMAGNETIC RESONANCE; EXCESS SI; HIGH-TEMPERATURE ANNEALING; MAGNETRON CO-SPUTTERING; OXIDE LAYER; SI NANOPARTICLES; SILICON CRYSTALLITES;

CRYSTALLITES; ELECTRON RESONANCE; MAGNETRONS; NANOPARTICLES; OXIDE FILMS; OXYGEN; PARAMAGNETIC MATERIALS; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SILICON OXIDES;

AMORPHOUS SILICON;

EID: 65649105856     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.154     Document Type: Article

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