Effects of pattern characteristics on copper CMP

Journal of Semiconductors

Volumn 30, Issue 4, 2009, Pages

  Ruan, Wenbiao ^a   Chen, Lan ^a   Li, Zhigang ^a   Ye, Tianchun ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Copper chemical mechanical polishing; Copper dishing; Density; Dielectric erosion; Line spacing; Line width

Indexed keywords

CIRCUIT PERFORMANCE; COPPER CHEMICAL-MECHANICAL POLISHING; COPPER CMP; COPPER DISHING; COPPER LINES; COPPER THICKNESS; GEOMETRIC CHARACTERISTICS; LAYOUT PATTERNS; LINE SPACING; MODELING METHOD; PATTERN CHARACTERISTIC; PATTERN DENSITY; POLISHING PRESSURE; PROCESS CONDITION; ROTATIONAL SPEED; SLURRY CHEMISTRY; TEST RESULTS;

CHEMICAL POLISHING; COPPER; NANOTECHNOLOGY; POLISHING;

CHEMICAL MECHANICAL POLISHING;

EID: 65649093063     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/4/046001     Document Type: Article

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