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Volumn 7198, Issue , 2009, Pages

High d/gamma values in diode laser structures for very high power

Author keywords

9xx nm; Asymmetric structures; D ; Diode lasers; High power; Highbrightness; Large optical cavity; Optical trap

Indexed keywords

9XX NM; ASYMMETRIC STRUCTURES; DIODE LASERS; HIGH-POWER; HIGHBRIGHTNESS; LARGE OPTICAL CAVITY; OPTICAL TRAP;

EID: 65649087963     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.810041     Document Type: Conference Paper
Times cited : (24)

References (15)
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  • 3
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    • 0036060780 scopus 로고    scopus 로고
    • High-brightness diode lasers with high d/Γ ratio obtained in asymmetric epitaxial structures
    • Petrescu-Prahova, I. B., Moritz, T.and Riordan, J., "High-brightness diode lasers with high d/Γ ratio obtained in asymmetric epitaxial structures", Proc. SPIE 4651, 73-79 (2002).
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    • Petrescu-Prahova, I.B.1    Moritz, T.2    Riordan, J.3
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    • Petrescu-Prahova, I. B., Moritz, T. and Riordan, J., "High Brightness, Long, 940 nm Diode Lasers with Double Waveguide Structure", Proc. SPIE 4995, 176-183 (2003).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.