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Volumn 4651, Issue 1, 2002, Pages 73-79

High-brightness diode lasers with high d/Γ ratio obtained in asymmetric epitaxial structures

Author keywords

Asymmetric structures; Diode lasers; High brightness; High power; Low confinement; Optical trap; Optical wall

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTATIONAL METHODS; CURRENT DENSITY; DEGRADATION; QUANTUM EFFICIENCY;

RADIATION FLUX;

SEMICONDUCTOR LASERS;

EID: 0036060780 PISSN: 0277786X EISSN: None Source Type: Journal
DOI: 10.1117/12.467935 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.