High brightness, long, 940 nm diode lasers with double waveguide structure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4995, Issue , 2003, Pages 176-183

  Petrescu Prahova, Iulian ^a   Moritz, Tom ^a   Riordan, John ^a  

^a High Power Devices   (United States)

Author keywords

Diode lasers; High brightness; Low confinement; Optical trap; Optical wall

Indexed keywords

CURRENT DENSITY; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; STRUCTURE (COMPOSITION);

OPTICAL TRAP;

SEMICONDUCTOR LASERS;

EID: 0141456345     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.475752     Document Type: Conference Paper

References (5)

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2. I. B. Petrescu-Prahova, T. Moritz, J. Riordan, "High-brightness diode lasers with high d/Γ ratio obtained in asymmetric epitaxial structures'", Novel In-Plane Semiconductor Lasers, Proc. of SPIE vol. 4651, pp. 73-79, SPIE, Bellingham, 2002.
3. L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev "8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers", Appl. Phys. Lett., 69, pp. 1532-1534, 1996
4. G. Erbert, G. Beister, R. Hulsewede, A. Knauer, W. Pittroff, J. Sebastian, H. Wenzel, M. Weyers, G. Trankle, "High Power, Highly Reliable Al-free 940 nm Diode Lasers", IEEE J. Selected Topics Quantum Electron., 7, pp. 143-148, 2001
5. L. A. Coldern, S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, p 173, Willey, New York, 1995