Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence x-ray anomalous diffraction

Physical Review Letters

Volumn 92, Issue 18, 2004, Pages

  Letoublon A ^a   Favre Nicolin, V ^a,b   Renevier, H ^a,b   Proietti, M G ^c   Monat, C ^d   Gendry, M ^d   Marty, O ^e   Priester, C ^f  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITY OF ZARAGOZA   (Spain)

^d ECOLE CENTRALE DE LYON   (France)

^e UNIVERSITÉ LYON 1   (France)

^f INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; DEFORMATION; FINITE DIFFERENCE METHOD; FOURIER TRANSFORMS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; STRAIN; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

CHEMICAL GRADIENTS; LATTICE MISMATCH; QUANTUM STRUCTURES; STRUCTURE FACTOR;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2942677208     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.186101     Document Type: Article

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