Microstructural effects on electrical conductivity relaxation in nanoscale ceria thin films

Journal of Chemical Physics

Volumn 130, Issue 17, 2009, Pages

  Tsuchiya, Masaru ^a   Bojarczuk, Nestor A ^b   Guha, Supratik ^b   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SUBSTRATES; CATALYTIC SURFACES; CERIA FILMS; CERIA THIN FILMS; CONDUCTIVITY RELAXATIONS; ELECTRICAL CONDUCTIVITIES; ELECTRON BEAM EVAPORATIONS; HIGH TEMPERATURES; IDENTICAL CONDITIONS; MICROSTRUCTURAL EFFECTS; MICROSTRUCTURE EVOLUTIONS; NANO-CRYSTALLINE; NANO-SCALE; NANOSTRUCTURED OXIDES; NEAR-SURFACE DEFECTS; ORIENTATION RELATIONSHIPS; OUT-OF-PLANE ORIENTATIONS; OXYGEN EXCHANGES; OXYGEN INCORPORATIONS; POLY-CRYSTALLINE; POLYCRYSTALLINE FILMS; POLYCRYSTALLINE STRUCTURES; RATE-LIMITING; RESPONSE TIME; ROOM TEMPERATURES; SOLID STATE IONIC DEVICES; STRUCTURAL CHANGES; TEMPERATURE DEPENDENTS; TEXTURED FILMS;

ACTIVATION ENERGY; ALUMINUM; CERIUM COMPOUNDS; CORUNDUM; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FUEL CELLS; GRAIN GROWTH; MOLECULAR DYNAMICS; MOLECULAR ORIENTATION; OXYGEN; RELAXATION PROCESSES; SOLID STATE DEVICES; SUBSTRATES; SURFACE DEFECTS; THIN FILMS;

GROWTH KINETICS;

EID: 65549165950     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126092     Document Type: Article

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