Growth mechanism of a 1D molecular line across the dimer rows on H-Terminated Si(001)

Physical Review Letters

Volumn 102, Issue 16, 2009, Pages

  Choi, Jin Ho ^a   Cho, Jun Hyung ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY-FUNCTIONAL CALCULATIONS; FIRST-PRINCIPLES; GROWTH MECHANISMS; HIGH TEMPERATURES; MOLECULAR LINES; SI DIMERS; SI(0 0 1); SI(001) SURFACE; SI-C BONDS; SI-S BONDS; STRUCTURAL MODELS;

MODEL STRUCTURES; OLEFINS; OLIGOMERS; THERMODYNAMIC STABILITY;

SILICON;

EID: 65549119171     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.166102     Document Type: Article

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