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Volumn 20, Issue 18, 2009, Pages
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Electrical bistabilities and operating mechanisms of memory devices fabricated utilizing ZnO quantum dot-multi-walled carbon nanotube nanocomposites
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Author keywords
[No Author keywords available]
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Indexed keywords
AMBIENT CONDITIONS;
BISTABLE MEMORIES;
CURRENT VOLTAGES;
ELECTRICAL BISTABILITIES;
ENVIRONMENTAL STABILITIES;
HETEROSTRUCTURES;
MEMORY DEVICES;
MULTI-WALLED CARBON NANOTUBES;
OPERATING MECHANISMS;
QUANTUM DOTS;
STORAGE CAPABILITIES;
TRANSMISSION ELECTRON MICROSCOPY IMAGES;
ZNO;
ZNO QUANTUM DOTS;
CHEMICAL SENSORS;
CRYSTALS;
DATA STORAGE EQUIPMENT;
MULTIWALLED CARBON NANOTUBES (MWCN);
OPTICAL WAVEGUIDES;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
TRANSMISSION ELECTRON MICROSCOPY;
ZINC OXIDE;
CARBON NANOTUBES;
CARBON NANOTUBE;
NANOCOMPOSITE;
NANOMATERIAL;
QUANTUM DOT;
ZINC OXIDE;
ARTICLE;
ELECTRICITY;
NANOFABRICATION;
NANOTECHNOLOGY;
PRIORITY JOURNAL;
TRANSMISSION ELECTRON MICROSCOPY;
CHEMISTRY;
CONFORMATION;
CRYSTALLIZATION;
ELECTROCHEMISTRY;
EQUIPMENT;
EQUIPMENT DESIGN;
INFORMATION RETRIEVAL;
INSTRUMENTATION;
MACROMOLECULE;
MATERIALS TESTING;
METHODOLOGY;
PARTICLE SIZE;
SURFACE PROPERTY;
ULTRASTRUCTURE;
CRYSTALLIZATION;
ELECTROCHEMISTRY;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
INFORMATION STORAGE AND RETRIEVAL;
MACROMOLECULAR SUBSTANCES;
MATERIALS TESTING;
MOLECULAR CONFORMATION;
NANOSTRUCTURES;
NANOTECHNOLOGY;
NANOTUBES, CARBON;
PARTICLE SIZE;
QUANTUM DOTS;
SURFACE PROPERTIES;
ZINC OXIDE;
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EID: 65549116397
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/18/185202 Document Type: Article |
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Times cited : (20)
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References (22)
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