Effect of a ZnO buffer layer on the characteristics of MgZnO thin films grown on Si (100) substrates by radio-frequency magnetron sputtering

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3931-3934

  Moon, Jin Young ^a   Kim, Jun Ho ^a   Kim, Hyunghoon ^a   Lee, Ho Seong ^a   Kim, Young Yi ^b   Cho, Hyung Koun ^b   Kim, Hong Seung ^c  

^a Kyungpook National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Korea Maritime University   (South Korea)

Author keywords

MgZnO; Sputtering; TEM; ZnO buffer layer

Indexed keywords

BLUE SHIFTS; CO-SPUTTERING; EMISSION PEAKS; EPITAXIAL RELATIONSHIPS; MGZNO; MGZNO THIN FILMS; MICROSTRUCTURAL ANALYSIS; PL INTENSITIES; POLY-CRYSTALLINE; RADIO FREQUENCY MAGNETRON SPUTTERING; SI (100) SUBSTRATES; SI SUBSTRATES; TEM; X-RAY DIFFRACTIONS; ZNO; ZNO BUFFER LAYER;

BUFFER LAYERS; MAGNETRONS; OPTICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65449178726     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.103     Document Type: Article

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