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Volumn 517, Issue 14, 2009, Pages 4233-4237

3D simulations of the profile evolution during anisotropic wet etching of silicon

Author keywords

Anisotropic wet etching; Level set method; MEMS; Silicon

Indexed keywords

3-D SIMULATIONS; ANGULAR DEPENDENCES; ANISOTROPIC WET ETCHING; EFFECTIVE TOOLS; LEVEL SET METHOD; LEVEL-SET EQUATIONS; PROFILE EVOLUTIONS; SILICON ETCHINGS; SPARSE FIELD METHODS; WET-ETCHING PROCESS;

EID: 65449147558     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.007     Document Type: Article
Times cited : (19)

References (11)
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  • 5
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    • Sparse field level set method for non-convex Hamiltonians in 3D plasma etching profile simulations
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    • Radjenović, B.1    Lee, J.K.2    Radmilović-Radjenović, M.3
  • 8
    • 0031700033 scopus 로고
    • Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration
    • Sato K., Shikida M., Matsushima Y., and Yamashiro T. Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration. Sens. Actuators A 64 (1988) 87
    • (1988) Sens. Actuators A , vol.64 , pp. 87
    • Sato, K.1    Shikida, M.2    Matsushima, Y.3    Yamashiro, T.4
  • 9
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    • A maskless post-CMOS bulk micromachining process and its application
    • Dai C., Chiou J., and Lu M. A maskless post-CMOS bulk micromachining process and its application. J. Micromech. Microeng. 15 (2005) 2366
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    • Dai, C.1    Chiou, J.2    Lu, M.3
  • 11
    • 0033888241 scopus 로고    scopus 로고
    • Differences in anisotropic etching properties of KOH and TMAH solutions
    • Shikida M., Sato K., Tokoro K., and Uchikawa D. Differences in anisotropic etching properties of KOH and TMAH solutions. Sens. Actuators A 80 (2000) 179
    • (2000) Sens. Actuators A , vol.80 , pp. 179
    • Shikida, M.1    Sato, K.2    Tokoro, K.3    Uchikawa, D.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.