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Volumn 517, Issue 14, 2009, Pages 4233-4237
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3D simulations of the profile evolution during anisotropic wet etching of silicon
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Author keywords
Anisotropic wet etching; Level set method; MEMS; Silicon
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Indexed keywords
3-D SIMULATIONS;
ANGULAR DEPENDENCES;
ANISOTROPIC WET ETCHING;
EFFECTIVE TOOLS;
LEVEL SET METHOD;
LEVEL-SET EQUATIONS;
PROFILE EVOLUTIONS;
SILICON ETCHINGS;
SPARSE FIELD METHODS;
WET-ETCHING PROCESS;
ANISOTROPIC ETCHING;
ANISOTROPY;
CRYSTAL SYMMETRY;
DROP BREAKUP;
LEVEL MEASUREMENT;
MEMS;
MICROELECTROMECHANICAL DEVICES;
NONMETALS;
POTASSIUM;
POTASSIUM HYDROXIDE;
THREE DIMENSIONAL;
THREE DIMENSIONAL COMPUTER GRAPHICS;
WET ETCHING;
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EID: 65449147558
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.02.007 Document Type: Article |
Times cited : (19)
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References (11)
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