Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy

Journal of Physics D: Applied Physics

Volumn 42, Issue 8, 2009, Pages

  Ouardi, Siham ^a   Gloskovskii, Andrei ^a   Balke, Benjamin ^a   Jenkins, Catherine A ^a   Barth, Joachim ^a   Fecher, Gerhard H ^a   Felser, Claudia ^a   Gorgoi, Mihaela ^b   Mertin, Marcel ^b   Schäfers, Franz ^b   Ikenaga, Eiji ^c   Yang, Ke ^c   Kobayashi, Keisuke ^c   Kubota, Takahide ^d   Oogane, Mikihiko ^d   Ando, Yasuo ^d  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; BULK MATERIALS; CAPPING LAYERS; ELECTRON MEAN FREE PATHS; HARD X-RAY PHOTOELECTRON SPECTROSCOPIES; HEUSLER COMPOUNDS; HIGH ENERGIES; IN CORES; MULTILAYERED THIN FILMS; NON-DESTRUCTIVE; THERMAL TREATMENTS; X- RAY DIFFRACTIONS;

COBALT; COBALT COMPOUNDS; DEPTH PROFILING; ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; FILM PREPARATION; HEAT TREATMENT; LIGHT; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR ORBITALS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SODIUM COMPOUNDS; SPECTRUM ANALYSIS; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 65449139950     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/8/084011     Document Type: Article

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