Temperature dependence of the interface moments in Co2 MnSi thin films

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Telling, N D ^a   Keatley, P S ^b   Shelford, L R ^b   Arenholz, E ^c   Van Der Laan, G ^a,d   Hicken, R J ^b   Sakuraba, Y ^f   Tsunegi, S ^e   Oogane, M ^e   Ando, Y ^e   Takanashi, K ^f   Miyazaki, T ^e  

^a DARESBURY LABORATORY   (United Kingdom)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d DIAMOND LIGHT SOURCE LTD   (United Kingdom)

^e TOHOKU UNIVERSITY   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; DICHROISM; FILM THICKNESS; MAGNETORESISTANCE; METHOD OF MOMENTS;

ANTIFERROMAGNETIC COUPLING; INTERFACE MOMENTS; TEMPERATURE DEPENDENCE;

THIN FILMS;

EID: 44049092489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2927482     Document Type: Article

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