Preferential orientation of Te particles in melt-grown CZT

Journal of Crystal Growth

Volumn 311, Issue 9, 2009, Pages 2641-2647

  Henager Jr , C H ^a   Edwards, D J ^a   Schemer Kohrn, A L ^a   Bliss, M ^a   Jaffe, J E ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

A1. Characterization; A1. Crystal morphology; A1. Interfaces; A2. Bridgman technique; B2. Semiconducting cadmium compounds

Indexed keywords

A1. CHARACTERIZATION; A1. CRYSTAL MORPHOLOGY; A1. INTERFACES; A2. BRIDGMAN TECHNIQUE; B2. SEMICONDUCTING CADMIUM COMPOUNDS;

CADMIUM; CADMIUM COMPOUNDS; ELECTRONIC PROPERTIES; GAMMA RAYS; MORPHOLOGY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; Z TRANSFORMS; ZINC;

SEMICONDUCTING TELLURIUM;

EID: 65349182912     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.002     Document Type: Article

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