A new physics-based compact model for AlGaN/GaN HFETs

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 787-790

  Yin, Hong ^a   Bilbro, G L ^a   Trew, R J ^a  

^a North Carolina State University   (United States)

Author keywords

HEMT; Modeling; Resistance

Indexed keywords

COMPUTER SIMULATION; CURVE FITTING; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; MATHEMATICAL MODELS; PARAMETER ESTIMATION;

ATLAS; CURRENT CONTINUITY; HFET; PHYSICS-BASED ANALYTIC MODELS;

FIELD EFFECT TRANSISTORS;

EID: 34748839091     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380058     Document Type: Conference Paper

References (3)

1. R.J.Trew, G.L.Bilbro, Y. Liu, W.Kuang, H. Yin, "Microwave AlGaN/GaN HFETs" IEEE Microwave Magazine, vol. 6, issue. 1, pp. 56-66, March 2005.
2. W.Kuang, R. J. Trew, G.L.Bilbro,Y. Liu, H.Yin, "Impedance Anomalies and RF Performance Limitations in AlGaN/GaN HFETs," IEEE wireless and microwave technology conference, 2006
3. Hong Yin, G. L. Bilbro, R. J. Trew, Y. Liu, W. Kuang, "Developnent of a New Physics-Based RF Model for AlGaN/GaN HFETs," IEEE wireless and microwave technology conference, 2006