Development of a new physics-based RF model for AlGaN/GaN HFETs

IEEE Wireless and Microwave Technology Conference, WAMICON 2006

Volumn , Issue , 2006, Pages

  Yin, Hong ^a   Bilbro, G L ^a   Trew, R J ^a   Liu, Y ^a   Kuang, W ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; GALLIUM NITRIDE; MICROWAVE DEVICES; MICROWAVES;

ALGAN/GAN HFETS; ANALYTIC MODELING; DEVICE SIMULATIONS; DRAIN ACCESS; DRAIN BIAS; DRAIN VOLTAGES; MICROWAVE TECHNOLOGY; NEW PHYSICS (NP); QUANTUM WELLS; SIMULATION RESULTS;

BEHAVIORAL RESEARCH;

EID: 48749103893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WAMICON.2006.351913     Document Type: Conference Paper

References (1)

1. ATLAS User's Manual pp108