First-principles study of faceted single-crystalline silicon carbide nanowires and nanotubes

Journal of Physical Chemistry C

Volumn 113, Issue 3, 2009, Pages 856-861

  Wang, Zhenhai ^a   Zhao, Mingwen ^a   He, Tao ^a   Zhang, Xuejuan ^a   Xi, Zexiao ^a   Yan, Shishen ^a   Liu, Xiangdong ^a   Xia, Yueyuan ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND-GAP SEMICONDUCTORS; DENSITY FUNCTIONAL; E-FORMS; FIRST-PRINCIPLES STUDIES; FORMATION ENERGIES; INDIRECT BAND GAPS; MULTI-WALLED; SI ATOMS; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE SILICONS; SURFACE STATE; WALL THICKNESS;

CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ENERGY GAP; HETEROJUNCTIONS; HYDROGENATION; NANOTUBES; NANOWIRES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65249162237     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp808231s     Document Type: Article

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