Reliability of tunneling magnetoresistance recording head - Lifetime, failure mode, and production screening

IEEE Transactions on Magnetics

Volumn 42, Issue 2, 2006, Pages 232-236

  Wong, Pak Kin ^a   Inage, Kenji ^b   Lai, Anthony W Y ^a   Leung, Eric C W ^a   Shimizu, Tad ^a  

^a SAE Magnetics HK Ltd   (Hong Kong)

^b TDK CORPORATION   (Japan)

Author keywords

Breakdown; Charge trapping; Lifetime; Recording head; TMR

Indexed keywords

ELECTRIC POTENTIAL; MAGNETORESISTANCE; RELIABILITY; SOFTWARE PROTOTYPING; THERMAL EFFECTS;

BREAKDOWN; CHARGE TRAPPING; LIFETIME; RECORDING HEAD; TMR;

MAGNETIC RECORDING;

EID: 31344458781     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.861742     Document Type: Article

References (3)

1. D. J. Dumin, quot;Oxide wearout, breakdown, and reliability,quot; in Oxide Reliability, A Summary of Silicon Oxide Wearout, Breakdown, and Reliability. Singapore: World Scientific, 2002, pp. 1-102.
2. B. Oliver et al., quot;Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions,quot; J. Appl. Phys., vol. 95, pp. 1315-1322, Feb. 2004.
3. P. K. Wong and T. Shimizu, quot;Non-destructive determination of the reliability of individual TMR head,quot; presented at the First Asia Forum, 28th Annu. Conf. Magnetics in Japan, Okinawa, Japan, Sep. 2004, Paper 23aB-5.