Amplification of magnetoresistance and Hall effect of Fe3 O4 - SiO2 -Si structure

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Wang, Xianjie ^a,b   Sui, Yu ^a,c   Tang, Jinke ^b   Li, Yao ^a   Zhang, Xingquan ^a   Wang, Cong ^a   Liu, Zhiguo ^a   Su, Wenhui ^a,c  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF WYOMING   (United States)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL SWITCHING; CONDUCTION PATHS; HIGHER TEMPERATURES; INVERSION LAYERS; LARGE NEGATIVE MAGNETORESISTANCES; LASER MOLECULAR BEAM EPITAXIES; MAGNETITE FILMS; N-TYPE SILICONS; RESISTANCE DROPS; SINGLE PHASE; THERMALLY-ASSISTED TUNNELING;

AMPLIFICATION; CRYSTAL GROWTH; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GYRATORS; HALL EFFECT; MAGNETITE; MAGNETOELECTRONICS; MAGNETORESISTANCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OXIDE MINERALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; THERMAL EFFECTS;

MAGNETIC FIELD EFFECTS;

EID: 65249136374     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3065987     Document Type: Article

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