STM study of Si(1 1 3) 3 × 2-Ga surface

Surface Science

Volumn 603, Issue 9, 2009, Pages 1197-1202

  Irokawa, Katsumi ^a   Nagura, Yuichiro ^a   Kobayashi, Hidekazu ^a   Hara, Shinsuke ^a   Fujishiro, Hiroki I ^a   Miki, Hirofumi ^a   Kawazu, Akira ^a   Watanabe, Kazuyuki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Density functional calculations; Gallium; Scanning tunneling microscopy; Silicon; Surface structure

Indexed keywords

AB-INITIO CALCULATIONS; CLEAN SURFACES; DENSITY FUNCTIONAL CALCULATIONS; INTERSTITIAL SI; PENTAMER; SI (113); STM IMAGES;

ADATOMS; ADSORPTION; ATOMS; GALLIUM; SCANNING; SCANNING TUNNELING MICROSCOPY; SILICON;

SURFACE STRUCTURE;

EID: 65249121338     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.02.036     Document Type: Article

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