Theoretical study on the temperature-induced structural transition of the Si(1 1 3) surface

Surface Science

Volumn 559, Issue 1, 2004, Pages 63-69

  Lee, Gun Do ^a   Yoon, Euijoon ^a  

^a Seoul National University   (South Korea)

Author keywords

Ab initio quantum chemical methods and calculations; High index single crystal surfaces; Silicon; Surface energy; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HIGH TEMPERATURE APPLICATIONS; INTERFACIAL ENERGY; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; VACUUM;

AB INITIO QUANTUM CHEMICAL METHOD AND CALCULATIONS; HIGH INDEX SINGLE CRYSTAL SURFACES; INTERSTITIAL STRUCTURES; SCANNING TUNNELING MICROSCOPY (STM);

SURFACE CHEMISTRY;

EID: 2442639366     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.04.005     Document Type: Article

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