Response of materials to single ion events

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1705-1712

  Zhang, Yanwen ^a   Weber, William J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Electronic energy loss; Ionization; Single ion event; Time of flight

Indexed keywords

CONTINUOUS ENERGIES; ELECTRON-HOLE PAIRS; ELECTRONIC ENERGY LOSS; ENERGETIC PARTICLES; ENERGY LOSS; ENERGY REGIONS; ENERGY RESOLUTIONS; ENERGY RESPONSE; ION-SOLID INTERACTIONS; LIGHT YIELDS; MATERIAL RESPONSE; MATERIALS PERFORMANCE; PULSE HEIGHT DEFECTS; RADIATION DETECTIONS; SI SEMICONDUCTOR DETECTORS; SINGLE ION EVENT; SINGLE RADIATIONS; TECHNOLOGICAL APPLICATIONS; TIME-OF-FLIGHT; TIME-OF-FLIGHT SYSTEMS;

ENERGY DISSIPATION; HELIUM; IONIZATION; IRRADIATION; LIGHT; LUMINESCENCE; NEGATIVE IONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 65249090923     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.104     Document Type: Article

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