The application of high energy ion implantation for silicon radiation detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 514-520

  Von Borany, J ^a   Schmidt, B ^a   Grotzschel R ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC FIELDS; HIGH ENERGY PHYSICS; IONIZATION; IONS; NUCLEAR PHYSICS; PARTICLE SPECTROMETERS; PHOSPHORUS; PLASMAS; PROTONS; RADIATION DETECTORS; SILICON SENSORS;

ELECTRIC FIELD DISTRIBUTION; HEAVY ION SPECTROSCOPY; HIGH ENERGY ION IMPLANTATION; HIGH FIELD REGION DETECTORS; INTERNAL ELECTRIC FIELD STRENGTH; LOW DOSE PHOSPHORUS IMPLANTATION; LOW ENERGY HEAVY IONS; PULSE HEIGHT DEFECT; SILICON PN JUNCTION RADIATION DETECTORS;

ION IMPLANTATION;

EID: 0030214706     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00235-5     Document Type: Article

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